摘要
ZnO是一种重要的直接宽带隙半导体,室温下禁带宽度为3.37eV,激子束缚能为60meV,对于开发蓝绿、蓝光、紫外等多种发光器件有巨大潜力.纳米ZnO表现出与体材料明显不同的电学、磁学、光学、化学等性质,是目前纳米材料的研究热点之一.本文介绍了ZnO和纳米ZnO的一些基本性质,综述了近年来纳米ZnO的合成以及应用等方面研究的一些进展.
ZnO is a direct bandgap semiconductor with a wide bandgap energy of 3.37 eV and an exciton binding energy of 60 meV at room temperature. It has potential applications in green, blue or ultravillet light emitters. Nanometer ZnO shows special electrical, magnatic, optical and chemical properties which are different from those of ZnO bulk crystal. ZnO and nano-ZnO have suprising properties and have attracted many attentions recently. Now many methods have focused on the synthesis of nano-ZnO. This paper reviews some basic properties and research progress of ZnO and nanoZnO.
出处
《物理实验》
2006年第6期12-19,共8页
Physics Experimentation
