摘要
为了解决现有硅刻蚀工艺中存在的刻蚀质量等问题,采用激光加工技术和电化学加工技术相结合的工艺对硅进行了刻蚀,研究了该复合工艺的工艺特性。实验中采用248nm KrF准分子激光作光源聚焦照射浸在KOH溶液中的阳极n-S i上,实现激光诱导电化学刻蚀。在实验的基础上,研究了激光电化学刻蚀S i的刻蚀孔的基本形貌,并对横向刻蚀和背面冲击等质量问题进行了分析。结果表明,该工艺刻蚀的孔表面质量好、垂直度高;解决了碱液中S i各向异性刻蚀的自停止问题,具有加工大深宽比微结构的能力;也具有不需光刻显影就能进行图形加工的优越性。
To solve some problems of silicon etching technique, laser electrochemical etching process, which combines laser direct etching process and electrochemical etching process, is adopted to etch silicon. The characteristic of compound etching technique is investigated. The experiments of micromachining silicon by laser-induced electrochemical etching are carried out with a 248nm KrF excimer laser as light source and KOH solution as electrolyte. Based on the experimental results, basic etching silicon appearances by laser electrochemical etching are researched and the quality problems of transverse effect on etching surface and impacting effect on back surface are analyzed. The quality and verticality of cavities by the techniques are good. At the same time,the etching stop of silicon anisotropic etching in alkaline solution is raveled in the process. As a result, it possesses the ability of machining big aspect ratio microstructure. Besides, this process can transfer pattern without mask.
出处
《激光技术》
CAS
CSCD
北大核心
2006年第3期235-237,共3页
Laser Technology
基金
国家高技术研究发展计划资助项目(2002AA421190)
国家重点基础研究发展计划资助项目(2003CB716207)
国家自然科学基金资助项目(50405033)
关键词
激光技术
光电化学
准分子激光
刻蚀
硅
laser technique
light electrochemistry
excimer laser
etching
silicon
