摘要
对甚高频等离子体增强化学气相沉积技术制备的微晶硅薄膜太阳电池进行了研究.喇曼测试结果显示:微晶硅薄膜太阳电池在p/i界面存在着一定的非晶孵化层.孵化层的厚度随硅烷浓度的增加或辉光功率的降低而增大.可以通过适当的硅烷浓度或适当的辉光功率来降低孵化层的厚度.
The structure of microcrystalline silicon thin film solar cells prepared by very high frequency plasma enhanced chemical vapor deposition,is studied. Raman measurements indicate that there is an amorphous incubation layer at the p/i interface in the solar cells. The thickness of the incubation layer increases with increasing silane concentration and decreasing discharge power. A suitable silane concentration and discharge power can be used to reduce the thickness of the incubation layer.
基金
国家重点基础研究发展规划(批准号:G2000028202
G2000028203)
天津市科技攻关(批准号:043186511)
国家自然科学基金(批准号:60506003)资助项目~~
关键词
微晶硅薄膜太阳电池
孵化层
喇曼光谱
microcrystalline silicon thin film solar cells
incubation layer
Raman scattering spectra
