摘要
本文应用碰撞理论研究了硅在ＫＯＨ溶液中各向异性腐蚀的机理。结果表明，硅在ＫＯＨ溶液中的各向异性腐蚀速率不但与硅材料晶面原子密度差异有关，而且还与活化离子ＯＨ－数有关，活化粒子数与成正比。应用本文给出的腐蚀机理能满意解释硅在ＫＯＨ溶液中各向异性腐蚀的实验结果。
This paper has Studied anisotropic etching mechanism of St in KOH scution by using collision theory.The results show that the anisotropic corrosion-rate not only is related to difference of atom densty, hot also is allied to activation OH,and the activation OH-are The experimental resuls of Si in KOH Solution are directly proportional to The experimental resuls of Si in KOH Solution aresatisfactorily explained by the anisotropic ething mechanism.
出处
《黑龙江大学自然科学学报》
CAS
1996年第3期55-58,54,共5页
Journal of Natural Science of Heilongjiang University
关键词
硅
各向异性
腐蚀
碰撞
氢氧化钾溶液
Anisotropic etching of Si
KOH Solution
Effective collision
Activation analysis
