摘要
采用变分法研究了在外磁场作用下GaN/AlxGa1-xN无限抛物量子阱(PQW)中类氢杂质态能级,给出不同磁场下杂质态基态能、结合能随阱宽的变化关系以及能量随磁场强度变化的函数关系。数值结果表明:外磁场对类氢杂质能量和结合能均有明显的影响,杂质态能量随磁场的增强而显著增大,并且随阱宽的增大而增大;GaN/Al0.3Ga0.7N PQW对杂质态的束缚程度比GaAs/Al0.3Ga0.7As PQW强。
The energy of a hydrogenic impurity in GaN/AlxGa1-x N compositional parabolic quantum well （PQW） is investigated by variational method. The ground state, the binding energy of hydrogenic impurity as a function of the well width and the energy of hydrogenic impurity as a function of the magnetic field are given. The numerical results indicate that the influence of external magnetic field on the ground state and the binding energy of a hydrogenic impurity is obvious,and the influence increases with increasing well width. The bound degree of the GaN/Al0.3 Ga0.7 N PQW to the hydrogenic impurity is stronger than that of the GaAs/Al0.3Ga0.7As PQW.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2006年第7期891-894,共4页
Journal of Optoelectronics·Laser
基金
国家自然科学基金资助项目(10364003)
内蒙古师范大学青年科研基金资助项目(QN004032)
