摘要
介绍了硅研磨片清洗的重要性,分析了影响硅研磨片质量的主要因素,即金属杂质和各种污染物。重点分析了硅研磨片表面沾污的原因,并且通过大量的实验分析得到了活性剂和碱性清洗液、去离子水的最佳体积比是0.20∶1.00∶10.0,清洗的最佳时间为3 m in^5 m in和最佳温度范围为40℃~50℃。
Introduce the importance of cleaning of grinding silicon wafer. Analyse the main factors of impairing grinding silicon wafer quality, including metal impurity and various contaminants. Mainly analyse the reasons of surface contaminants of grinding silicon. The proportion of activator, alkaline cleaning liquid and DI water is 0.20- ： 1.00： 10.00 by experiments, cleaning time is 3 min - 5 min, temperature is 40℃ - 50 ℃.
出处
《电子工艺技术》
2006年第4期215-217,共3页
Electronics Process Technology
关键词
硅片
清洗
污染物
铁沾污
金刚砂及杂质
超声波清洗
Silicon wafer
Cleaning
Contaminant
Iron contaminant
Emery and impurity
Ultrasonic cleaning
