摘要
研究了用非真空铂坩埚下降法生长的CsI(Tl)晶体的在紫外和γ射线激发下的光致发光和光衰减特征,探索了CsI(Tl)晶体的发光强度和发光不均匀性与Tl离子含量和分布之间的关系以及改善晶体发光均匀性的措施。并对CsI(Tl)晶体在γ射线辐照下光输出随积分时间和辐照剂量的变化做了分析和讨论。实验表明,用这种方法所生长的CsI(Tl)晶体的发射波长、衰减时间和辐照硬度与其他方法生长的同类晶体相同。
CsI（Tl） single crystal is a traditional scintillator and usually grown under vacuum condition. However, in this paper, the crystal was grown with Bridgrnan method and under non-vacuum condition. Its luminescence and decay characteristics excited under UV and γ ray were measured. The light yield and its non-uniformity along the growth direction as well as their relation to the distribution of thallium activators are analyzed. The dependence of light yield on the integration time and irradiation hardness is discussed. Based on the measurement and discussion, it was proposed that the luminescent uniformity of CsI （Tl） crystal along its growth direction can be improved by adjusting the front and the bear end relative to the orientation of the boule. It was proved that the scintillation properties of CsI（Tl） crystals grown with non-vacuum are as good as those crystals grown with vacuum condition and there is no any obvious difference in the emission peak, decay time and irradiation hardness.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2006年第4期385-389,共5页
Nuclear Electronics & Detection Technology
基金
美国GE公司上海研发中心的资助
