摘要
以饱和氢氧化钙溶液模拟混凝土孔隙液,运用Mott-Schottky(M-S)图来研究混凝土中钢筋钝化膜的半导体特性。试验表明：在电位—0．78～0．37 V(SCE)范围,混凝土中钢筋钝化膜的C_(SC)^(-2)-E关系呈M-S曲线,且斜率为正,表明钢筋钝化膜为n-型半导体,其平带电位约为—0．85V；钢筋钝化膜电容表现出的对测试频率的依赖性使M-S曲线呈频率弥散现象；体系中氯离子的增加(＜0．2％)及钢筋电极在体系中浸泡时间的延长,均使钝化膜的施主密度增大。
The semiconducive properties of the passive film on rebar in simulated concrete pore solution were analyzed by Mott-Schottky （M-S） plots. The relation of C^-2 SC-E of rebar electrode showed linear M-S relationship and positive slope within -0. 78-0. 37 V（SCE）, indicating the passivation film on rebar was n-type semiconductor. The capacitance values were frequency dependent and there was a strong dispersion of the M-S plots with frequency. With adding chloride ions in simulated concrete pore solution or prolonging the time of rebar electrode in system, the donor density of film increased.
出处
《机械工程材料》
CAS
CSCD
北大核心
2006年第7期7-10,共4页
Materials For Mechanical Engineering
基金
浙江省自然科学基金(502019)
