摘要
利用数值模拟分析的方法,对GOI法(又称泡生法)蓝宝石晶体生长过程进行模拟,分析了系统的环境参数变化对晶体生长的固液界面凸出率和晶体内温度分布、温度梯度的影响．结果表明：热交换器的热对流系数和工作流体的温度变化对晶体生长的固液界面凸出率和温度梯度具有相同的影响效果；在晶体长到一定尺寸后,只靠加大热交换器的取热能力,不足使晶体继续生长．通过降低系统的加热能力,减少传入坩埚内的热量,可使晶体继续长大．加热系统的环境温度和组合热对流系数对晶体生长具有相似的影响趋势,但影响效果却不同,环境温度越高时,固液界面凸出率越小．
This paper makes use of numerical nalysis includes how parameter change of the interface, temperature distribution of crystals simulation analysis on method of GOI growing sapphire. The asystem environment influences on project ratio of solid - liquid inside and temperature gradient influence on crystals growing. The results show that thermal convection coefficient of thermal exchanger and temperature change of target liquid have the same effect on project ratio of solid - liquid interface and temperature convection. Even when crystals grow to a certain size, if we just depend on enlarge the acquiring thermal ability of thermal exchanger; we can not make crystals continue growing. On the other way, we can have crystals continue to growing through depress heating ability of heater to make less thermal go into the pot. There is the resemble influence from environment temperature of heater and association thermal convection coefficient, but environment temperature higher and project ratio of solid -liquid interface lower.
出处
《哈尔滨工业大学学报》
EI
CAS
CSCD
北大核心
2006年第7期1020-1024,1037,共6页
Journal of Harbin Institute of Technology
关键词
蓝宝石
数值模拟
环境参数
GOI法
sapphire crystal, numerical simulation, environment parameter, GOI method
