摘要
研究了在改性注氧隔离(SIMOX)材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。实验表明在10keV的X-射线总剂量辐照下,器件的背栅、正栅阈值电压负向漂移和漏电流都控制在较小的水平;在2Mrad(SiO2)的辐照下仍能正常工作。研究证实了无论哪种栅结构,对于背栅,PG均为最劣偏置,其次是OFF偏置,而ON偏置下器件受辐照的影响最小;而对于正栅,ON均为最劣偏置。通过拟合计算出了绝缘埋层(BOX,即埋氧)中的饱和净正电荷密度Not和空穴俘获分数α。
Total - dose irradiation effect of partially - depleted NMOS transistors with gate - all - around and H -gate structures fabricated on modified SIMOX was studied. It is found experimentally that back and top gate threshold shifts and drain current is confined to a low level during irradiation. The transistors can work properly under the dose of 2 Mrad （ SiO2 ）. It is also confirmed that for the back gate of both gate - all - around and H gate, PG is the worst case; for the top gate, ON is the worst case. The saturated net positive charge density Not and the fraction of hole capture α in buried oxides are calculated by data fitting.
出处
《功能材料与器件学报》
EI
CAS
CSCD
北大核心
2006年第4期308-312,共5页
Journal of Functional Materials and Devices
关键词
绝缘体上硅(SOI)
总剂量辐照效应
环栅结构
H型栅结构
silicon on insulator
total - dose irradiation effect
gate - all - around structure
H - gate structure
