4张果虎,吴志强,方锋,秦福,常青,周旗钢,屠海令.300mm硅单晶的生长技术[J].Journal of Semiconductors,2001,22(3):383-386. 被引量:13
二级参考文献16
1程景柏.CZ硅大直径缩颈生长及其抗拉性能研究.2000年全国半导体材料学术会议[M].,..
2陶文铨.计算传热学的近代进展 [M].科学出版社,2001..
3[美]RA劳迪斯.单晶生长 [M].科学出版社,1979..
4程景柏,2000年全国半导体材料学术会议
5Hirata H . Three-dimensional Numerical Analysis of Effects of Cusp Magnetic Field on the Flows,Oxygen Transport and Heat Tranfer in a Czochralski Silicon Melt[J].J.Crystal Growth,1992,125,181-207.
6Joseph Morton L, Nancy Ma, David F, Bliss George Bryant G.Dopant Segregation during Liquid-encapsulated Czochralski Crystal Growth in a Steady Axial Magnetic Field[J]. J.Crystal Growth,2002,242:471.
7Jong-Seon Kim,Tai-yong Lee. Time-dependent Simulation of the Growth of Large Silicon Crystals by the Czochralski Technique Using a Turbulent Model for Melt Convection[J].J. Crystal Growth,1997,180:450.
8Ozoe H, Iwamoto M. Combined Effects of Crucible Rotation and Horizontal Magnetic Field on Dopant Concentration in a Czochralski Melt[J].J.Crystal Growth,1994,142:236.
9Series R W. Effect of a Shaped Magnetic Field on Czochralski Silicon Growth[J].J.Crystal Growth,1989,97:92-98.
10Kakimoto K, Yi K W, Eguchi M. Oxygen Transfer during Single Silicon Crystal Growth in Czochralski System with Vertical Magnetic Fields[J]. J.Crystal Growth,1996,163:238-242.