摘要
采用电子回旋共振等离子体化学气相淀积（ECR-CVD）方法以C4F8和CH4为源气体制备了氟化非晶碳（a-C：F）膜并在氮气气氛中对a-C：F膜进行了退火处理研究。X光电子能谱（XPS）化学结构分析表明，退火后a-C：F膜中CF3，CF2和CF含量减少，而C-CR（x=1～3）交联结构增多。电学性能研究指出，退火后a-C：F薄膜的介电常数由于电子极化和薄膜密度的增大而上升，Al／a-C：F／Si结构的阻滞效应由于界面态密度下降而减弱，同时a-C：F膜的π-π^＊带隙和电荷陷阱能量减小并导致薄膜漏电流增大。
Fluorinated amorphous carbon （a-C ： F） films were deposited using C4F8 and CH4 as precursor gases by electron cyclotron resonance chemical vapor deposition （ECR-CVD） and was subsequently annealed in a nitrogen atmosphere. Chemical compositions were investigated by X-ray photoelectron spectroscopy （XPS）. Experimental results show that concentrations of CF3, CF2, and CF bonds decrease, while that of C-CFx （x= 1 - 3） increase after annealing. The dielectric constant of a-C ： F films increases due to increased electronic polarization and film density. The magnitude of C-V hysteresis effect decreases due to reduced interface trap density. The energy gap between π valence band and π^＊ conduction band also decreases, leading to reduction of trap energy and enhancement of leakage current.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2006年第7期1081-1083,共3页
Journal of Functional Materials
基金
国家自然科学基金资助项目(9027022)
电子元器件可靠性物理及其应用技术国家级重点实验室资助项目(51433020205DZ01)
