期刊文献+

垂直布里奇曼法生长碘化铅单晶体 被引量:2

Growth of lead iodide single crystal by vertical bridgman method
下载PDF
导出
摘要 碘化铅(PbI2)晶体的平均原子序数较高,有较宽的禁带宽度,作为一种新型室温核辐射探测器材料有着广阔前景.以高纯Pb和I2单质为原料,采用两温区气相输运法(TVM)成功合成出单相PbI2多晶原料,并以此为原料,用垂直布里奇曼法(VBM)生长了3种不同颜色的PbI2单晶体.研究表明:晶体生长工艺参数对晶体的质量有重要影响,适当调整温度场和安瓿在生长炉中的位置,可有效地避免或减轻晶体富碘现象,从而生长出优质的黄色PbI2单晶体. Lead Iodide (PbI2 ) crystal is a promising material for room temperature nuclear radiation detectors, characterized by its large average atomic number and wide band gap. In this paper, the Lead Iodide (PbI2 ) poly-crystal has been successfully synthesized directly from Pb and 12 by two-zone vapor-transporting method(TVM). PbI2 single crystal with three different colors were prepared using Vertical Bridgman Method (VBM). By adjusting the position of ampoule in a suitable temperature gradient to prevent iodine atoms from the crystal inside, the yellow PbI2 single crystal with good quality can be prepared.
出处 《材料科学与工艺》 EI CAS CSCD 北大核心 2006年第4期428-431,共4页 Materials Science and Technology
基金 西华大学青年教师基金资助项目
关键词 碘化铅 气相输运法 垂直布里奇曼法 多晶体 单晶体生长 lead Iodide TVM VBM poly-crystal crystal growth
  • 相关文献

参考文献11

  • 1ROTH S,WILLIG W R.Lead iodide nuclear particle detectors[J].Appl Phys Lett,1971,18:328 -330.
  • 2SHOJI T,OHBA K,SUEHIRO T,et al.Fabrication of radiation detectors using PbI2 crystal[J].IEEE Trans Nucl Sci,1995,42(4),659 -660.
  • 3BHAVSAR D S,SARAF K B.Morphology of PbI2crystals grown by gel method[J].Cryst Res Technol,2002,37 (1),51 -55.
  • 4SHAH K S,BENNETT P,KLUGERMAN M,et al.Lead iodide optical detectors for gamma ray spectroscopy[J].IEEE Trans Nucl Sci,1997,44(3),448 -450.
  • 5FORNARO L,SAUCEDO E,MUSSIO L,et al.Toward epitaxial lead-iodide films for X-ray digital imaging[J].IEEE Trans Nucl Sci,2002,49(5),2274-2278.
  • 6OLIVEIRA I B,COSTA F E,ARMELIN M J,et al.Purification and growth of PbI2 crystals[J].IEEE Trans Nucl Sci,2002,49(4),1968 -1973.
  • 7SCHIEBER M,LUND J C,OLSEN R W,et al.Material properties and room-temperature nuclear detector response of wide bandgap semiconductors[J].Nucl Inst and Meth,1996,A377,492 -495.
  • 8FORNARO L,SAUCEDO E,MUSSIO L,et al.Lead iodide platelets:correlation between surface,optical,and electrical properties with X-ray and Y-ray spectrometric performance[J].IEEE Trans Nucl Sci,2002,49(6),3300-3305.
  • 9ECKSTEIN J,ERLER B,EICHE C,et al.Growth of bulk lead di-iodide crystals from the vapor phase[J].J Cryst Growth,1993,131:453.
  • 10SHOJI T,OHBA K,SUEHIRO T,et al.Characterization of PbI2 radiation detectors using the response of α-Rays[J].IEEE Trans Nucl Sci,1994,41(4),694-697.

同被引文献31

  • 1李玉红,李振生,张弘,李丹民,贺德衍.气压和温度对气相法生长PbI_2晶体的影响[J].兰州大学学报(自然科学版),2005,41(5):74-76. 被引量:2
  • 2赵欣,金应荣,朱兴华,贺毅,邱春丽.碘化铅单晶体生长工艺分析[J].硅酸盐通报,2006,25(4):168-171. 被引量:1
  • 3贺毅,朱世富,赵北君,金应荣,朱兴华,栾道成.碘化铅单晶体生长新方法探索[J].人工晶体学报,2007,36(2):289-292. 被引量:4
  • 4朱兴华,赵北君,朱世富,金应荣,向安平,魏昭荣.富铅配料的PbI_2晶体生长与性能表征[J].Journal of Semiconductors,2007,28(6):898-901. 被引量:1
  • 5金应荣,李丽霞,贺毅,朱兴华.U型坩埚上升法生长碘化铅单晶体[J].西华大学学报(自然科学版),2007,26(1):31-32. 被引量:3
  • 6Novosad S S,Novosad I S,Matviishin I M.Luminescence and photosensitivity of PbI2 crystals[J].Inorg Mater,2002,38(10):1253.
  • 7Lund J C,Shah K S,Squillante M R,et al.Properties of lead iodide semiconductor radiation detectors[J].Nucl Instrum Methods Res Sect A,1989,283:299.
  • 8Ahuja R.Arwin H,Veje E,et al.Electronic and optical properties of lead iodide[J].J Appl Phys,2002,92(12):7219.
  • 9Fornaro L,Saucedo E,Mussio L,et al.Toward epitaxial lead-iodide films for X-ray digital imaging[J].IEEE Trans Nucl Sci,2002,49(5):2274.
  • 10Schieber M,Lund J C,Olsen R W,et al.Material proper-ties and room-temperature nuclear detector response of wide bandgap semiconductors[J].Nucl Instrum Methods Res Sect A,1996,377:492.

引证文献2

二级引证文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部