摘要
建立了一种一维随机成核生长模型，在三种不同的近邻条件下进行模拟，得到了一系列聚集生长图形，并计算了相应的分形维数．所得图形与多孔硅形成图样相似．
A computer simulation model of one dimensional random successive nucleation growth is presented. A series of patterns and their fractal dimensions are obtained for three near neighbor conditions. The simulated structures are similar to those of porous silicon. The properties of the D X curve and the critical threshold of the cluster change from fractal to uniform structure are also discussed briefly.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1996年第12期1960-1969,共10页
Acta Physica Sinica
