摘要
21世纪是经济信息化、信息数字化的高科技时代,信息的爆炸式增长及电子器件持续微型化的要求需要不断研究和开发更高存储密度、更快响应速度、更长存储寿命及可反复读、写的材料和器件.在纳米/分子尺度上实现存储功能的超高密度信息存储已成为当前信息领域一个倍受关注的研究热点.本文从存储材料和技术角度介绍了基于电学双稳态的超高密度信息存储最新研究进展.
The 21century is an era of high technology with information-based economy and digitized information. The explosive increase of information and the miniaturization of electronic devices demand new recording technologies and materials that combine high density, fast response, long retention time and re-writing capability. Ultrahigh density data storage at the nanometer/molecular-scale based on electrical bistability has attracted great attention in recent years. The laiest progress in this field is reviewed from the viewpoint of recording material and technology. Future research and development of ultrahigh density data storage is also discussed.
出处
《物理》
CAS
北大核心
2006年第9期773-778,共6页
Physics
基金
国家自然科学基金(批准号:50173028
90201036
20421101)资助项目
关键词
超高密度信息存储
纳米/分子电子学
扫描探针显微镜
ultrahigh density data storage, nano/molecular-electronics, scanning probe microscope
