摘要
设计了一种单片集成PWM型电流模式升压变换器，芯片内部集成了耐压22V的DMOS功率开关管，开关频率为1．6MHz，采用1．5μm BCD工艺实现。芯片具有很宽的输入电压（2．7～14V）、高效率（85％）、低关断电流、快速暂态响应和低功耗等特性，适宜于用作便携式设备的电源管理，也可作为IP核，嵌入同种工艺下的其它芯片。文中除了对芯片设计方法、思路及主要电路模块结构的设计方案进行讨论外，还提出了减小单片集成开关电源噪声的措施。
This paper presented a monolithic PWM current-mode boost DC-DC converter with integrated 22 V DMOS FET power switch. The boost converter operating at fixed frequency of 1.6 MHz had been fabricated with a 1.5μm BCD process. The chip featured wide input voltage range （2.7 V to 14 V）, high efficiency over large load range （up to 85%）, low shutdown current, fast transient response and low power, which was designed for portable power management applications and embed in other chips as a IP core too. In addition to design methods and schematic of the main cell circuit modules, this paper also put forward measures of reducing switching noise on monolithic switching power IC.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2006年第3期420-425,共6页
Research & Progress of SSE
基金
国家自然科学基金项目(Nos.90207020)
