摘要
通过固相反应及陶瓷烧结工艺制备了具有钙钛矿结构的锰酸锶镧陶瓷靶,利用该靶材采用直流磁控溅射法在硅(100)和石英玻璃基片上制备了锰酸锶镧薄膜。研究了沉积气氛对薄膜晶体结构的影响。对高溅射压力下不同溅射功率沉积的薄膜样品的电阻-温度特性进行测量,显示薄膜具有-14-～22℃的高的金属到绝缘体的转变温度,并且随溅射功率的增加,薄膜在相变点附近的电阻变化幅度明显提高。
The Lao0.829Sr0.175MnO3 （LSMO）target with perevskite structure was prepared by conventional solid state reaction and standard ceramic technique,which was used to deposited LSMO films on single silicon（ 100 ） and quartz glass substrate by DC magnetren sputtering system.The influence of deposition parameter to the films crystal structure was investigated. Temperature dependence of resistance of films that was deposited with different sputtering power showed a high metal-insulator transition temperature,The change of films resistance near the transition temperature was enhanced with the increase of sputtering power.
出处
《真空与低温》
2006年第3期162-165,共4页
Vacuum and Cryogenics
关键词
磁控溅射
晶体结构
相变
magnetron sputtering
crystal structure
transition
