摘要
介绍了一种利用SiGe技术制作的低噪声SiGe微波单片放大电路(MMIC)。该电路以达林顿结构的形式级联,由两个异质结双极型晶体管(HBT)和4个电阻组成;HBT采用准自对准结构,其SiGe基区为非选择性外延。在1 GHz频率下,电路噪声为1.59 dB,功率增益为14.3 dB,输入驻波比为1.6,输出驻波比为2.0。
A low noise microwave monolithic integrated circuit （MMIC）using Darlington configuration SiGe hetero-junction bipolar transistors （HBT＇s）is presented. The circuit consists of two SiGe HBTs and four resistors. It is fabricated in a quasi-self-aligned process, with a non-selectively grown epitaxial SiGe base. The cutoff frequency of HBTs is 10.9 GHz and 9. 2 GHz, respectively. The MMIC is measured to have a noise figure of 1.59 dB, a power gain of 14. 3 dB, and an input arid output VSWR of 1.6 and 2.0 at 1 GHz.
出处
《微电子学》
CAS
CSCD
北大核心
2006年第5期588-590,共3页
Microelectronics
