摘要
报道了一个激光二极管（LD）抽运多波长连续输出的激光器和一个被动调Q的固体激光器。该激光器的增益材料是一种新型掺Yb^3＋的晶体Yb^3＋：Lu2SiO5（Yb^1LSO）。当吸收的抽运功率为2．57W时，连续输出的最大功率为490mW，斜率效率为22．2％，光-光转换效率为14．2％，激光阈值为299mW，输出激光波长为1084nm。多波长输出时，波长调谐范围为1034～1085nm。利用InGaAs可饱和吸收镜实现调Q输出时，斜率效率为3．0％，激光波长为1058nm。脉冲重复频率为25～39kHz，重复频率随着抽运功率的增加而增加。
New Yb-doped crystal Yb^3＋： Lu2SiO5 （Yb： LSO） lasers pumped by diode-laser at 976 nm with passively Q-switched and multi-wavelength continuous-wave （CW） output were demonstrated. The maximum CW output power was 490 mW with the absorbed pump power of 2.57 W. The slope efficiency and optical-optical conversion efficiency were 22.2% and 14.2% respectively. The threshold was 299 mW, and the laser wavelength was 1084 nm. The wavelength could be tunable from 1034 to 1085 nm with a prism. For the Q-switched output, the laser operated at 1058 nm with an InGaAs semiconductor saturable absorber mirror （SESAM）. The Q-switched output slope efficiency of 3.0% with the maximum absorbed pump power of 1.73 W was also obtained. The pulse repetition rate was 25～39 kHz and was increased with the pump power increased.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2006年第10期1297-1300,共4页
Chinese Journal of Lasers
基金
北京市优秀人才基金(20041D0501511)
北京市教委基金(KM200610005004)
国家杰出青年基金(60425516)
国家重点基础研究项目(G1999075201-2)资助课题
关键词
激光器
半导体可饱和吸收镜调Q
激光材料
半导体抽运
lasers
semiconductor saturable absorber mirror Q-switched
laser materials
laser diode-pumped
