期刊文献+

磷酸处理ITO基底对有机发光二极管性能的改善 被引量:3

Phosphoric Acid Treatment of ITO Substrate for Improvement of OLED Performance
下载PDF
导出
摘要 用10%、15%、20%3种浓度(体积分数)的磷酸分别对ITO玻璃进行处理,四探针测试表明其面电阻基本不变,原子力显微镜观测到酸处理后的ITO表面形貌更加平坦,紫外-可见光光谱显示出磷酸处理几乎不影响可见光透过率;以之为基底制备了典型结构(ITO/TPD/Alq/Al)有机发光二极管(OLEDs),并对其光电性能进行了测试,结果表明在经过浓度为15%的磷酸处理过的ITO玻璃上制备的OLEDs表现出最好的光电性能,其发光最大亮度和发光效率分别是未经酸处理的ITO上器件的近2倍。 ITO-coated glass was immerged in phosphoric acid (H3 PO4 ) with three kinds of concentration of 10 %, 15 %, 20 %(volume fraction),respectively. The observation with an atomic force microscopy (AFM) reveals that the surface roughness of the treated ITO film with the acid was remarkably improved. The record with a UV-visible light photometer indicates that the transparence of the ITO film keeps nearly unchanged after being treated with the phosphoric acid. The electrical and optical characteristics of OLEDs, which were fabricated on the treated ITO-coated glass with the classic structure of ITO/TPD/Alq/Al, were measured and compared with diodes prepared on the untreated sample. The results show that the diodes, which on the ITO treated with 15 % H3PO4, demonstrated the best photoelectric performance, in which the EL luminance and current efficiency has been promoted more nearly two times than that of the original devices, respectively.
机构地区 暨南大学物理系
出处 《液晶与显示》 CAS CSCD 北大核心 2006年第5期451-455,共5页 Chinese Journal of Liquid Crystals and Displays
基金 广东省自然科学基金资助项目(No.021169) 暨南大学教改项目(No.51011533)
关键词 OLED 表面处理 ITO 电致发光效率 OLED surface treating ITO EL efficiency
  • 相关文献

参考文献20

  • 1Kim J S, Cacialli F, Cola A. Increase of charge carriers density and reduction of Hall mobilities in oxygen-plasma treated indium-tin-oxide anodes [J]. Appl. Phys. Lett. , 1999,75 (1) :19-21.
  • 2Osada T, Kugler T H, Salaneck W R, et al. Polymer based light-emitting devices:Investigations on the role of the indium-tin oxide (ITO) electrode [J]. Synth. Met. , 1998,96:77-80.
  • 3Nguyen T P, Rendu P L, Dinh N N, et al. Theimal and chemical treatment of ITO substrates for inprovement of Iperformance[J]. Synth. Met. , 2003,138:229-232.
  • 4Wu C C, Wu C I, Sturm J, et al. Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices [J]. Appl. Phys. Lett. , 1997, 70 (11): 1348-1350.
  • 5Song W, So S K, Wang D. Angle dependent X ray photoemission study on UV ozone treatments of indium tin oxide[J]. Appl. Surf. Sci. , 2001,77(3):158-164.
  • 6Sugiyama K, Ishii H, Ouchi Y. Dependence of indium tin oxide work function on surface cleaning method as studied by ultraviolet and X ray photoemission spectroscopy [J]. J. Appl. Phys. , 2000,87(1):295-298.
  • 7马颖,张方辉,靳宝安,牟强,袁桃利.ITO透明导电薄膜的制备及光电特性研究[J].液晶与显示,2004,19(5):376-379. 被引量:20
  • 8Tak Y H, Kim K B, Par H G K, et al. Criteria for ITO ( indium tin oxide ) thin film as the bottom electrode of an organic light emitting diode [J]. Thin Solid Films, 2002, 411(1):12-16.
  • 9Milliron D J, Hill I G, Shen C, etal. Surface oxidation activates indium tin oxide for hole inject ion [J]. J. Appl.Phys. , 2000, 87(1):572- 576.
  • 10Qiu Y, Zhang D Q, Wang L D, et al. Performance improvement of organic light emitting diode by low energy ion beam treatment of the indium tin oxide surface [J]. Synth. Met. , 2002, 125 (3):415-418.

二级参考文献38

  • 1占红明,饶海波,张化福.基于有机电致发光显示的透明导电膜ITO[J].液晶与显示,2004,19(5):386-390. 被引量:12
  • 2张麦丽,王秀峰,牟强,张方辉.ITO玻璃光刻工艺的研究[J].液晶与显示,2005,20(1):22-26. 被引量:14
  • 3邵作叶,郑喜凤,陈宇.平板显示器中的OLED[J].液晶与显示,2005,20(1):52-56. 被引量:60
  • 4[1]Osada T,Kugler Th,Broms P,et al.Polymer-based light-emitting devices:investigations on the role of the indium-tin oxide (ITO) electrode[J].Synth.Met.,1998,96:77-80.
  • 5[3]Liu J M,Lu P Y,Weng W K.Studies on modifications of ITO surfaces in OLED devices by Taguchi methods[J].Material Science Engineering B,2001,85:209-211.
  • 6[4]Li F,Tang H.Effects of aquaregia treatment of indium-tin-oxide substrates on the beahavior of double layered organic light-emitting diodes[J].Appl.Phys.Lett.,1997,70(20):2 747-2 749.
  • 7[5]Fujita S,Sakamoto T,Ueda K,et al.Surface treatment of indium-tin-oxide substrate and its effects on initial nucleation process of diamine films[J].Jpn.J.Appl.Phys.,1997,36:350-353.
  • 8[6]Steuber S,Staudigel J,Stossel M,et al.Reduced operating voltage of organic electroluminescent devices by plasma treatment of the indium tin oxide anode[J].Appl.Phys.Lett.,1999,74(23):3 558-3 560.
  • 9[7]Kim J S,Friend R H,Cacialli F.Surface energy and polarity of treated indium-tin-oxide anodes for polymer light-emitting diodes studied by contact-angle measurements[J].J.Appl.Phys.,1999,86(5):2 774-2 778.
  • 10朱履冰.表面与界面物理[J].天津:天津大学出版社,1992,(172).

共引文献51

同被引文献33

引证文献3

二级引证文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部