摘要
通过对温场的数值模拟计算,发现外加轴向、径向温度梯度能够提高界面稳定性,减小熔体热对流,有利提高晶体的生长质量。根据大尺寸蓝宝石晶体生长的温场要求,对常规的GO I法晶体生长炉进行了改造,并设计了独特的加热体形状和隔热屏结构,能够为晶体生长系统提供可控的轴向、径向温度梯度。通过试验比较也证明了改造温场后的单晶炉能够生长出性能较好的大尺寸蓝宝石晶体。
With the help of numerical simulation on temperature field, we get the result that additional axial and radial temperature gradient can increase the stability of interface, decrease thermal convection of fused mass and improve the quality of crystal growth. According to the temperature field requirement for growing large size sapphire, the conventional GOI furnace was modified with designing special shape of heater and structure of heat shield. It can provide controllable axial and radial temperature gradient for the system of crystal growth. It is indicated that the improved temperature field furnace could grow better quality large size sapphire.
出处
《航空材料学报》
EI
CAS
CSCD
2006年第5期81-85,共5页
Journal of Aeronautical Materials
关键词
温场优化
数值模拟
蓝宝石
GOI法
optimization of temperature field
numerical simulation
sapphire
GOI method
