摘要
我们采用传统固态反应方法烧结制备(Nb2O5)1-x(TiO2)x陶瓷,给出了掺杂量x从0.01到0.13陶瓷的介电性能。在本工艺条件下,所有样品的介电系数均大于120。当样品中TiO2的掺杂量为5mol%时,陶瓷的介电性能最佳:介电系数和损耗分别为217和0.078。XRD测试实验给出,当x≤0.05时,陶瓷的主要相结构为Nb2O5;当x≥0.07时,主相为TiNb24O62。
（ Nb2O5） 1-x （ TiO2 ） x ceramic system for x = 0.01 - 0.13 were prepared by conventional solidstate reaction technique. All of the specimens showed high dielectric constants more than 120 with the process in this paper. The main phase structure is Nb2O5 when TiO2 substitution is less than 5mol% or TiNb24O62 while substitution more than 7mol% for the specimens by X-ray diffractions technique. The best dielectric properties were presented when TiO2 substitution reaches 5mol% , dielectric constant and loss value of which are 217 and 0. 078 respectively.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2006年第5期936-938,共3页
Journal of Synthetic Crystals
