摘要
采用螺旋波等离子体辅助射频溅射沉积技术在A l2O3(0001)衬底上沉积ZnO外延薄膜,通过对其结构及光学性质的分析,探讨了衬底温度对薄膜生长特性的影响。实验结果表明,由于等离子体对反应气体的活化及载能粒子对表面反应的辅助作用,采用该等离子体辅助溅射技术能够在较低的衬底温度下实现较高质量的ZnO薄膜外延生长,然而,较高的衬底温度所引起的表面反应不利于薄膜中的氧空位及锌填隙等缺陷的减少,这将限制薄膜的外延质量及光学特性的进一步提高。
In this work, we deposited ZnO epitaxial films on Al2O3 （0001） substrates using the helicon wave plasma assistant sputtering technique at different substrate temperatures. Through the analysis of the structure and optical properties of the ZnO epitaxial films, we discussed the influence of the substrate temperature on the properties of the ZnO films growth. The results indicate that we can achieve the high quality epitaxial growth of the ZnO films in an appropriate temperature due to the activation of the plasma to the reaction gases and the assistant effect of the carrier energy particles to the surface reaction. However, the surface reaction arosed by the higher substrate temperatures make against to the reduction of oxygen vacancies. This restricts the improvement of the epitaxial qualities and the optical properties of the films.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2006年第5期1118-1122,共5页
Journal of Synthetic Crystals
基金
河北省自然科学基金(No.E2006001006)
