摘要
通过熔胶-凝胶方法合成了用于电子封装的聚酰亚胺PI/SiC复合薄膜介电材料,并通过扫描电镜、透射电镜、红外光谱对复合薄膜进行结构表征。结果表明,聚酰亚胺PI／SiC复合材料是一种共聚物,是纳米SiC粒子均匀分散在PI基体中的复合材料体系。在4284A型阻抗分析仪上测量了材料的电容,并换算出相应介电常数,最低达ε=2．0。
In this paper, the polyimide/silicon carbide （PI/SiC） nanocomposites for electronic assembly were synthesized using Sol-Gel method and characterized using scanning electron microscope （SEM）, Transmission electron microscope （TEM）, Fourier transform infrared spectroscopy （FTIR）. It was found that SiC nanoparticles formed chemical bonding with PI functional groups and well dispersed into PI matrix. The as-formed nanoeomposites can greatly reduce the dielectric constant to 2.0.
出处
《合成技术及应用》
2006年第3期45-48,共4页
Synthetic Technology & Application
基金
国家自然科学基金资助项目(20447005)
关键词
聚酰亚胺
薄膜
电子封装材料
介电性能
polyimide/SiC composite film
Sol-Gel
dielectric properties
