摘要
An organics/metal Schottky diode is fabricated using 3, 4： 9, 10-perylenetetracarboxylic- dianhydride（PTCDA） thin film sandwiched between ITO and Au by simple thermal evaporation technique. The current-voltage（I-V） characteristics are investigated at room temperature in open air. The results show the rectification ratio is in excess of 100. From the capacitance-frequency（C-f） and capacitance-voltage（C-V） measurements, the Schottky barrier height between 0.2-0.3 eV is obtained according to standard Schottky theory.
organics/metal Schottky 用 3 被制作， 4：简单热蒸发技术在 ITO 和 Au 之间夹的 9,10-perylenetetracarboxylic- dianhydride (PTCDA ) 薄膜。当前电压(Ⅰ - Ⅴ) 特征在开的空中在房间温度被调查。结果证明校正比率超过 100。从 thecapacitance 频率(C-f ) 和电容电压(C-V ) 大小，在 0.2 ～ 0 .3 eV 之间的 Schottky 高度根据标准 Schottky 被获得理论。
基金
National"973"Foundation of China(2005CB724501)
Recreating Foundation of National Defence for ChineseAcademy of Sciences(CXJJ -145)
