摘要
用正电子湮灭寿命谱技术研究了ＮＴＤＣＺＳｉ的辐照损伤退火行为．发现辐照后的ＣＺＳｉ中产生了大量空位型缺陷。随着退火温度升高，这些缺陷不断分解，直到１１００℃仍有极少量空位型缺陷存在。
The positron annihilation lifetime technique has been performed to study the annealing behaviour of radiation damage of NTDCZSi. We have obtained results,that a large number of vancancy-type defects have been produced in CZSi after radiation. A continuous resolutionof these defects with a rise in annealing temperature, up to 1100℃, there still very few limitednumber of vacancy-type defects remain.
出处
《河北工业大学学报》
CAS
1996年第4期36-38,共3页
Journal of Hebei University of Technology
关键词
中子嬗变掺杂
硅
空位型缺陷
半导体
退火
NTDCZSi
Vacancy-type defects
Positron annihilation lifetime
