摘要
采用溶胶-凝胶法在玻璃基片上制备了Li、Mg掺杂的ZnO薄膜，研究了薄膜的光致发光（PL）性能。结果表明，由氧缺位引起的深能级发光峰（450～470nm）的强度随Li和Mg掺杂量的增加而下降。Mg的添加会使薄膜的带边发射（NBE）增强，而Li的掺杂抑制了NBE峰，同时引发403nm的Li杂质能级峰，该能级位于价带顶0．29eV处。
Li and/or Mg doped ZnO thin films were prepared on lime-glass substrate using Sol-Gel method, and the effects of Li and Mg dopants on the photolominescent （PL） characteristics were investigated. The results showed that the oxygen-defect-induced deep-level-emission near 450-470 nm decreased with the increase of Li and Mg dopants. It was also indicated that Mg dopant could promote the near-band emission （NBE）, while Li dopant restrained the intensity of NBE but induced an acceptor level about 0.29 eV （403 nm）.
出处
《压电与声光》
CSCD
北大核心
2006年第6期690-691,695,共3页
Piezoelectrics & Acoustooptics
基金
上海市重点学科基金资助项目(T0101)
