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(Hg,Cd)Te薄腰的LPE生长条件与纵向组分分布 被引量:1

Relationship between LPE Growth Condition and Composition-In-Depth Profile of (Hg,Cd)Te Epifilm
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摘要 根据热力学理论推导出(Hg,Cd)Te液相外延生长过程中有效分凝系数的表达式并与实验结果进行比较,由此分析了Hg压、溶液组成、降温速度及过冷度等对(Hg,Cd)Te液相外延薄膜纵向组分分布的影响. Abstract The effective segregation coefficient of (Hg,Cd)Te during the liquid phase epitaxy(LPE) period is derived and compared with the experimental data. Based on this, the influences of Hg partial pressure, liquid compositions, supercooling and cooling rate on the composition-in-depth profile of (Hg, Cd)Te liquide phase epitaxial films are analyzed.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1996年第10期721-728,共8页 半导体学报(英文版)
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参考文献4

  • 1李标,J Crystal Growth,1995年,148卷,41页
  • 2Chiang C D,J Crystal Growth,1988年,87卷,161页
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同被引文献5

  • 1Rosenfeld D,Garrber V, Ariel V, et al. Compositionally graded HgCdTe photodiodes: prediction of spectral response from transmission spectrum and the impact of grading. Journal of Electronic Materials, 1995,24(9): 1321
  • 2Price S L,Boyd P R. Overview of compositional measurement techniques for HgCdTe with emphasis on IR transmission, energy dispersive X-ray analysis and optical reflectance. Semicond Sci Technol, 1993,8: 842
  • 3Hougen C A. Model for infrared absorption and transmission of liquid-phase epitaxy HgCdTe. J Appl Phys, 1989,66 (8) : 3763
  • 4Liu Kun,Chu J H,Li Biao,et al. Measurement of composition in Hg1-xCdxTe epilayers. Appl Phys Lett,1994,64(21) :104
  • 5Yoshikawa M. Dislocation in Hg1-xCdxTe/Cd1-zZnzTe epilayers grown by liquid-phase epitaxy. J Appl Phys, 1988, 63 (5):1533

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