期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

半导体锗硅薄膜材料及相关工艺技术 被引量：3

Semiconductor SiGe Thin Films and the Related Technologies
下载PDF
导出
摘要 综述了锗硅薄膜材料的特性与应用、制备技术、固相结晶、与过渡金属的固相反应等一系列内容,探讨了提高锗硅薄膜结晶度的工艺手段和各自的优缺点,分析了锗硅薄膜与钴等过渡金属固相反应的特点及在集成电路上的应用。 The characteristics and applications of the SiGe film, fabrication process, solid-phase crystallization and solid state reaction with transition metals were summarized. The crystalinity enhancement techniques of the SiGe thin film and their respective advantages as well as disadvantages were discussed. And the reaction specialty with different transition metals such as cobalt, and the applications in IC were analyzed.
作者 王光伟
机构地区 天津工程师范大学电子工程系
出处 《半导体技术》 CAS CSCD 北大核心 2006年第12期881-886,891,共7页 Semiconductor Technology
基金 天津市高校科技发展基金资助项目(JW20051201)
关键词 锗硅 薄膜材料 固相结晶 固相反应 集成电路 SiGe thin film materials solid-phase crystallization solid state reaction IC
分类号 TN304.055 [电子电信—物理电子学]
  • 相关文献

参考文献30

  • 1KING T J,PFIESTER J R,SARASWAT K C.A variablework-function polycrystalline-Si1-xGex gate material for submicrometer CMOS technologies[J].IEEE Trans Electron Device Lett,1991,12(10):533-535.
  • 2BANG D S,CAO M,WANG A,et al.Resistivity of boron and phosphorus doped polycrystalline Si1-xGex films[J].Appl Phys Lett,1995,66(2):195-197.
  • 3KING T J,SARASWAT K C,PFIESTER J R.PMOS transistors in LPCVD polycrystalline silicon-germanium films[J].IEEE Trans Electron Device Lett,1991,12(11):584-586.
  • 4OSBURN C M,BELLUR K R.Low parasitic resistance contacts for scaled ULSI devices[J].Thin Solid Films,1998,332(1-2):428-436.
  • 5PREST M J,PALMER M J,GRASBY T J,et al.Transconductance,carrier mobility and l/f noise in Si/Si0.64Ge0.36/Si pMOSFETs[J].Mater Sci and Eng B,2002,89(1-3):444-448.
  • 6TSAI J A,REIF R.Polycrystalline silicon-germanium films on oxide using plasma-enhanced very-low-pressure chemical vapor deposition[J].Appl Phys Lett,1995,66(14):1809-1811.
  • 7HWANGCW,RYU M K,KIM K B,et al.Solid phase crystallization of amorphous Si1-xGex films deposited on SiO2 by molecular beam epitaxy[J].J Appl Phys,1995,77(7):3042-3047.
  • 8JELENKOVIC E V,TONG K Y,SUN Z,et al.Properties of crystallized Si1-xGex thin films deposited by sputtering[J].J Vac Sci Technol A,1997,15 (6):2836-2841.
  • 9YOKOYAMA S,ONIZUKA H,YOSHIZAWA Y,et al.Solid-phase crystallization behaviors of in situ phosphorous-doped amorphous silicon films deposited using Si2H6 and PH3[J].J Appl Phys,2003,94(1):770-773.
  • 10GLUCK M,SCHUPPEN A,ROSLER M,et al.CoSi2 and TiSi2 for Si/SiGe heterodevices[J].Thin Solid Films,1995,270(1-2):549-554.

二级参考文献33

  • 1KING T J, PFIESTER J R, SARASWAT K C. A variablework-function polycrystalline-Si1-xGex gate materials for submicrometer CMOS technologies[J]. IEEE Electron Device Lett, 1991,12(10): 533-535.
  • 2KING T J, SARASWAT K C. Polycrystalline silicongermanium thin-film transistors[J]. IEEE Trans Electron Device, 1994, 41(9): 1581-1591.
  • 3LIN H C, JUNG T G, LIN H Y, et al. Deposition and device application of in situ boron-doped polycrystalline SiGe films grown at low temperatures[J]. J Appl Phys 1993, 74 (9): 5395-5401.
  • 4KING T J, PFIESTER J R, SHOTT J D, et al. A polycrystalline Si1-xGex-gate CMOS technology[A].Tech Dig Int Electron Devices Meet[C].San Francisco,USA, 1990, 253-256.
  • 5HELLBERG P E, ZHANG S L, PETERSON C S. Work function of boron-doped polycrystalline SixGe1-x films[J]. IEEE Electron Device Lett,1997, 18(9): 456-458.
  • 6PONOMAREV Y V, SALM C, SCHMITZ J, et al. Gateworkfunction engineering using poly-(Si,Ge) for highperformance 0.18 mm CMOS technology[A]. Tech Dig Int Electron Devices Meet[C]. Washington DC,1997, 829-832.
  • 7LEE W C, KING T J, HU C. Observation of reduced boron penetration and gate depletion for poly-Si0.8Ge0.2 gated PMOS devices[J]. IEEE Electron Device Lett, 1999,20(1): 9-11.
  • 8CHEN K M, HUANG H J, HUANG G W, et al. P-channel metal oxide semiconductor field effect transistors with polycrystalline-SixGe1-x gate grown by ultra-high vacuum chemical vapor deposition system[J]. Jpn J Appl Phys, 1999, 38 (10A): L1099- L1101.
  • 9KING T J, SARASWAT K C, PFIESTER J R. PMOS transistors in LPCVD polycrystalline silicon-germanium films[J]. IEEE Trans Electron Device Lett,1991,12 (11): 584-586.
  • 10TSAI J A, TANG A J, NOGUCHI T, et al. Effects of Ge on material and electrical-properties of polycrystalline Si1-xGex for thin-film transistors [J]. J Electrochem Soc, 1995, 142 (9): 3220-3225.

共引文献1

同被引文献14

  • 1XIE ZiLi 1,2,3, ZHOU YuanJun 1 , SONG LiHong 1,2 , LIU Bin 1 , HUA XueMei 1,2 , Xiu XiangQian 1 , ZHANG Rong 1,2,3 & ZHENG YouDou 1,2,3 1 JiangSu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, Nanjing University, Nanjing 210093, China,2 Nanjing National Laboratory of Microstructures, Nanjing 210093, China,3 NJU-Yangzhou Institute of Opto-electronics, Yangzhou, 225001, China.Structural properties of GaN(0001) epitaxial layers revealed by high resolution X-ray diffraction[J].Science China(Physics,Mechanics & Astronomy),2010,53(1):68-71. 被引量：3
  • 2ZHANG YuChao1, XING ZhiGang2, MA ZiGuang2, CHEN Yao2, DING GuoJian2, XU PeiQiang2, DONG ChenMing3, CHEN Hong2 & LE XiaoYun1 1 School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100190, China,2 Renewable Energy Laboratory, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China,3 School of Information and Communication, Tianjin Polytechnic University, Tianjin 300160, China.Threading dislocation density comparison between GaN grown on the patterned and conventional sapphire substrate by high resolution X-ray diffraction[J].Science China(Physics,Mechanics & Astronomy),2010,53(3):465-468. 被引量：6
  • 3潘姬,赵鸿麟,杨恩泽,李德杰,吴伯瑜.硅衬底上锗硅合金光波导的研制[J].光学学报,1994,14(6):603-607. 被引量：7
  • 4TSUI B Y, LIN C P, HUANG C F, et al. O. 1 Ixm po- ly-Si thin film transistors for system-on-panel (SOP) ap- plications [ C ] // Proceedings of IEEE International Electron Devices Meeting. Washington, DC, USA, 2005 : 933-936.
  • 5WANG L Y, SUN L, HAND D, et al. A hybrid a-Si and poly-Si TFTs technology for AMOLED pixel circuits [J]. Journal of Display Technology, 2014, 10 (4): 317-320.
  • 6LEE C M, TSUI B Y. High-performance poly-Si nano- wire thin-film transistors using the HfO2 gate dielectric [J] IEEE Electron Device Letters, 2011, 32 (3): 327-329.
  • 7FOURTUNATO E, BARQUINHA P, MARTINS R. Oxide semiconductor thin-film transistors: a review of re- cent advances [ J ] Advanced Materials, 2012, 24 (22): 2945-2986.
  • 8JEON H S, HEO Y W, BAE B S, et al. Gate bias in- stability of hydrogenated amorphous SiGc thin-film tran- sistors [ J 1. Journal of the Korean Physical Society, 2013, 62 (8): 1183-1187.
  • 9SEDKY S, GROMOVA M, van der DONCK T, et al. Characterization of KrF excimer laser annealed PECVD Si Ge_x for MEMSpost-processing [J]. Sensors and Ac- tuators: A, 2006, 127 (2): 316-323.
  • 10LIU J F, PAN D, JONGTHAMMANURAK S, et al. Design of monolithieally integrated GeSi electro-absorption modulators and photodetectors on a SO1 platform [ J 1. Optics Express, 2007, 15 (2): 623-628.

引证文献3

二级引证文献1

半导体技术
2006年 第12期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部