摘要
偏置电压对Si-PIN型半导体探测器将产生两方面的影响。偏置电压越高,结电容越小;另一方面,偏置电压越大,探测器的漏电流就越大。而探测器的结电容,漏电流是影响谱仪系统能量分辨率的最重要的因素。结合一些实验结果,从两个方面来讨论偏置电压对于由Si-PIN探测器构成的X射线谱仪能量分辨率的影响,以及探测器偏置电压的合理选取原则。
Reverse voltage can cause two obvious changes of a Si-PIN detector. The detector terminal capacitance reduces and dark current increases when the reverse voltage increases, while both terminal capacitance and dark current are the most important aspects that affect the performance of the Si-PIN detectors. We will discuss the relationship between the reverse voltage and energy resolution of a spectrometer based on Si-PIN detector, and determine some principle of selecting the reverse voltage.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2006年第6期796-800,共5页
Nuclear Electronics & Detection Technology
基金
探月一号卫星X射线谱仪项目资助
