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RTD器件参数和测量方法——共振隧穿器件讲座(8) 被引量:4

Device Parameters and Measurement Method of RTD:Lecture of RTD(8)
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摘要 表征RTD器件特性和性能的参数分为直流负阻、等效电路及频率响应和开关时间三类。系统全面地介绍这三类参数及其测量方法,为测量和评价RTD的器件性能打下良好的基础。 The parameters for characterizing the RTD device performance and device characteristics can be divided into following three classes: D.C. NDR parameters; equivalent circuit parameters; frequency response and switching time. The three kinds of parameters and measuring methods were introduced systematically and completely. It makes a good basis for measuring and evaluating the device performance of RTD.
作者 郭维廉
出处 《微纳电子技术》 CAS 2006年第12期564-571,581,共9页 Micronanoelectronic Technology
关键词 RTD特性和测量 测量方法 直流参数 电路参数 瞬态参数 characterization and measurement on RTD measurement method D.C. parameters circuit parameters response parameters
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参考文献11

  • 1郭维廉,梁惠来,张世林,牛萍娟,毛陆虹,赵振波,郝景臣,魏碧华,张豫黔,宋婉华,杨中月.共振隧穿二极管[J].微纳电子技术,2002,39(5):11-15. 被引量:8
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二级参考文献1

共引文献7

同被引文献11

  • 1郭维廉.共振隧穿二极管(RTD)的物理模型——共振隧穿器件讲座(3)[J].微纳电子技术,2006,43(4):167-171. 被引量:6
  • 2郭维廉.共振隧穿二极管中的电荷积累效应——共振隧穿器件讲座(4)[J].微纳电子技术,2006,43(4):172-176. 被引量:1
  • 3郭维廉.RTD交流小信号等效电路模型——共振隧穿器件讲座(7)[J].微纳电子技术,2006,43(12):558-563. 被引量:1
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