摘要
为了有效控制ZnO纳米线的生长,采用物理热蒸发法在外加电场的条件下制备ZnO纳米线.通过在沉积区引入外电场,制备出了定向生长的ZnO纳米线、纳米梳子及纳米锥.借助扫描电子显微镜、X射线能谱分析仪和透射电子显微镜以及X射线衍射仪,研究外加电场对ZnO纳米线生长的影响.与没有外加电场的情况相比,ZnO纳米线的生长方式发生了较大的改变,由一点向空间发散生长转变为沿某一方向定向生长,其平均直径约70 nm,长约12μm.结果表明,外加电场能有效控制半导体纳米线的生长,使其生长更具有方向性.
In order to control the growth of ZnO nanowires effectively,the authors have fabricated ZnO nanowires by thermal evaporation under the condition of electric field. The ZnO nanowires, nanocombs and nanowimbles which grow along one direction have been fabricated by introducing an electric field in deposit area. The effect of electric field on the growth of ZnO nanowires has been studied by scanning electric microscope（SEM）, energy disperse X-ray spectroscopy （EDX） attached to SEM, transmission electron microscopy （TEM） and x-ray diffraction spectrometer （XRD）. Compared with that systesized without electric field, the growth mode of ZnO nanowire changes from radiate growth to growth along one direction, and it＇s average diameter is about 70 nm,it＇s length is about 12 urn. The results indicate that the electric field can control the growth of semiconductor nanowire effectively, and the nanowires become more directional. The positive effect of the electric field on the growth of the nanowires has also been proved.
出处
《西安工业大学学报》
CAS
2006年第5期443-447,共5页
Journal of Xi’an Technological University
基金
陕西省教育厅自然科学专项(2004E117)
陕西省纳米材料重点实验室纳米专项(03W)
