摘要
采用改进的垂直布里奇曼（MVB）法并引入籽晶生长技术，成功生长出直径60mm，单晶体积超过200cm^2的CdZeTe（CZT）晶锭。根据CZT晶片在近红外（NIR）波段的透过谱，由截止波长推算Zn组分在晶片中的平均含量，进一步的拟合得出晶体生长过程Zn沿晶锭轴向分凝因数约为1．30；分析了晶片在中红外波段内的红外透过率，发现波数在2000-4000cm^-1内透过率平直且较高，超过60％，而从2000cm^-1到500cm^-1随波数的减小透过率急速下降至零；由钝化后的Au／CZT晶片的I-V曲线，计算得到生长态C2T晶片的电阻率P达到1．8×10^9-2．6×10^10Ω·cm。
A 60mm diameter CdZnTe （CZT） ingot with the single-crystal volume over 200cm^3 was successfully grown by using seeded modified vertical Bridgman （MVB） method. To analyze Zn distribution of the as-grown ingot, the near infrared （NIR） spectra of the slice was measured and the cutoff wavelength was calculated. The partition coefficient of Zn during the growth was calculated to be about 1.30. The infrared transmission was flat and high at 2000-4000cm^-1 with the average value over 60%, while sharply decreased to zero from 2000cm^-1 to 500cm^-1, Through I-V curves of the Au/CZT wafers after passivation, the resistivity was calculated to be in the range of 1.8 × 10^9 -2.6 × 10^10Ω·cm.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2006年第6期1180-1184,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金重点项目(No.50336040)
