摘要
在本实验中我们利用电子束蒸发方法在玻璃衬底上制备了ZnO:A l透明导电膜,并对所得样品在400℃下进行了退火处理。利用扫描电子显微镜观察了样品的表面形貌,利用分光光度计分析了样品的光学性质,结果表明所得样品在可见光范围具有较好的透光性。利用四探针对其进行了电学性质的测量,表明衬底温度为200℃时制备的样品电阻率可达6×10-3Ω.cm。
In this paper ZnO：Al films were prepared on glass by electron beam evaporation. And the samples were annealed at 400℃. The properties of the films were investigated by X-ray diffraction spectrometer and scanning electron microscopy. The results show that the films have high transmittance in the visible area. The resistivity of the films prepared at 200℃ is 6 × 10^-3 Ω· cm.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2006年第6期1355-1358,1367,共5页
Journal of Synthetic Crystals
关键词
电子束蒸发
ZNO
Al薄膜
衬底温度
electron beam evaporation
ZnO ：Al films
substrate temperature
