摘要
针对目前常规SOI器件高温特性存在的问题,提出了采用等效电容法分析器件自加热效应的新观点,对抑制自加热效应原理进行了新的解析,根据埋层材料的介电常数不同,按等效电容法进行埋层厚度折算。在此基础上,提出了SOI器件的埋层新结构,并从介电常数的角度较好地验证了提出观点的正确性。最后得到,高介电常数等效埋层厚度的减小利于热泄散,高热导率的埋层材料提高了导热能力,在双重因素作用下有效抑制了自加热效应。
At present normal SOI device has problem in high-temperature performance. In this paper, a new point of view is advanced via buried insulator thickness being discounted to SiO2 thickness using method of equivalent capacitance based on different dielectric constant of buried insulator materials. From another aspect, theoretical basis is perfectly explained for bringing down self-heating effect. Also,a new SOl structure with AlN as a buried insulator under the channel of device is reported,perfectly proving that the new point of view is correct from dielectric constant angles. It is concluded that the reduction of equivalent buried insulator thickness based on high dielectric constant is beneficial to conduction of heat,and high thermal conductivity of buried insulator materials improves the capacity of conduction of heat, effectively bring down self-heating effect.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2006年第4期450-455,共6页
Research & Progress of SSE
关键词
绝缘体上的硅
埋层结构
自加热效应
介电常数
高温特性
SOI
buried insulator structure
self-heating effect
dielectric constant
hightemperature characteristics
