期刊文献+

SOI压力传感器封装工艺研究 被引量:1

Research on SOI Pressure Sensor Packaging Process
下载PDF
导出
摘要 针对高温环境下各种气体和液体压力的测量要求,应用微机电系统技术研制了一种新型的SOI(Silicon on Insulator)压力传感器,并设计了一种耐高温的封装结构.采用有限元方法详细地分析了贴片材料对传感器灵敏度、应力分布及可靠性的影响.分析数据表明,贴片材料的杨氏模量和厚度对传感器的灵敏度和可靠性有较大影响,合理选择贴片材料可优化传感器性能.在分析的几种焊接材料中,AuSn焊料是一种性能优良的焊接材料,比较适合用于SOI耐高温压力传感器的封装工艺中.通过对研制压力传感器样品性能的测试,结果表明:该传感器测量精度达0.5%,测量压力量程为30 MPa,测量介质温度为200℃. Aimmy at pressure measuring requirement of gas and liquid in high temperature environment, a new type of SOI (Silicon on Insulator) pressure sensitive chip is fabricated, and a packaging structure of resistance high temperature for the chip is designed. The effects of bonding material on sensor' s sisitivity , stress distrabution in chip and relibility of die bonding are analyzed in detail by applied finite element methed, and an optimizing technique is proposed. The results illuminate that Yangshi modul and thickness of die bonding materials have a bigger influence on sensistivity and reliability of sensor. The sensor's properties can be optimized by correct selecting die material. AuSn solder in several die bonding material analyzed is a better die bonding material, is more suited for SOI pressure sensor packaging. The testing results of the packaging samples show that the sensor can achieve the prceision of 0.5 %, the pressure range of 30 Mpa, and temperature of medium is 200℃.
出处 《河南理工大学学报(自然科学版)》 CAS 2006年第6期497-501,共5页 Journal of Henan Polytechnic University(Natural Science)
基金 国家"863"项目MEMS重大专项支持(2004AA404221)
关键词 SOI压力传感器 封装 贴片工艺 有限元分析 SOI pressure sensor Packaging Die bonding technique FEM analysis
  • 相关文献

参考文献8

  • 1[1]H TERABE,H ARASHIMA,N URA,et al.A silicon pressure sensor with stainless diaphragm for high temperatureand chemical application[C]∥International Conference on Solid-State Sensors and Actuators.Chicago,USA.1997:1481-1484.
  • 2[2]K PETERSEN,J BROWN,T VERMEULEN,et al.Ultra-stable-high-temperature pressure sensors using silicon fusion bonding[J].Sensors and Actuators A.1990,21(1):96-101.
  • 3朱作云,李跃进,杨银堂,柴常春,贾护军,韩小亮,王文襄,刘秀娥,王麦广.SiC薄膜高温压力传感器[J].传感器技术,2001,20(2):1-3. 被引量:13
  • 4[4]B DIEM,P REY,et al.SOI′ SIMOX′ from bulk to surface micromaching-A new age for silicon sensors and actuators[J].Sensors and Actuators A,1995,46(1):8-16.
  • 5[5]R ZIERMANN,J V BERG,W RCICHERT,et al.A high temperature pressure sensor with β-SiC piezoresistors on SOI substrates[C]∥International Conference on Solid-State Sensors and Actuators.Chicago,USA.1997:1411-1415.
  • 6赵玉龙,赵立波,蒋庄德.基于SIMOX技术的高温压力传感器研制[J].仪器仪表学报,2004,25(2):149-151. 被引量:3
  • 7范元斌,赵玉龙,赵立波.耐高温微型压力传感器设计[J].测井技术,2004,28(3):237-239. 被引量:5
  • 8关荣锋,赵军良,刘胜,张鸿海,黄德修.倒装芯片互连技术在光电子器件封装中的应用[J].河南理工大学学报(自然科学版),2005,24(1):50-54. 被引量:5

二级参考文献15

  • 1朱作云,李跃进,杨银堂,贾护军.SiC/Si异质生长的研究[J].西安电子科技大学学报,1997,24(1):122-125. 被引量:7
  • 2袁希光.传感器技术手册[M].北京:国防工业出版社,1992.76-79.
  • 3JPColinge.SOI技术[M].北京:科学出版社,1993.34-44.
  • 4郝跃,宽带隙半导体技术,2000年,78页
  • 5Chung Gwiysang,Sensors Actuators A,1993年,39卷,3期,241页
  • 6Diem B, Rey P, et al.. SOI ′SIMOX′ from Bulk to Surface Micromaching, A New Age for Silicon Sensors and Actuators [J]. Sensors and Actuators A46-47(1995) :8-16.
  • 7Desurvire E. Quantum Noise Model for Ultimate Information-capacity Limits in Long-haul WDM Transmission [J]. Electron. Lett., 2002. 36 (8): 983- 984.
  • 8Flachsbart B. Precision Self-Alignment Techniques for Optoelectronic Integration [D]. Ph. D. dissertation, University of Illinois at Urbana-Champaign, Urbana, IL, 1999.
  • 9Hunziker W, Vogt W. Melchior H. Low cost packaging of semiconductor laser arrays using passive self-aligned flip-chip technique on Si motherboard [A]. Proc. ECTC'95: 8-12.
  • 10Han H, Schramm J E, Mathews J and Boudreau R A. Micromachined silicon structures for single mode passive alignment [A]. SPIE'96, 2691: 118- 123.

共引文献22

同被引文献7

  • 1BRYZEK J. Impact of MEMS technology on society[J]. Sensors & Actuators A,1996, 56(1):1-9.
  • 2FUJITA H. Future of actuators and microsystem[J]. Sensor & Actuators A, 1996,56(2) : 105-111.
  • 3DANCASTER J ,KIM W,DO D,et al. Two-chip pressure sensor and signal condition[C[C]//The 12th International Conference on Solid State Sensors, Actuators and Microsystems. Boston, 2003 : 1699-1702.
  • 4KANDA Y. Piezoresistance effect of silicon[J]. Sensors and Actuators A, 1991,28(1) :83-91.
  • 5WANG X J, GUAN R F, LIU S. Transient behaviors of high temperature SO1 based pressure sensor[C]//The 6th International Conference on Electronic Packaging Technology. Shenzhen, China, 2005:621-623.
  • 6GUAN R F, WANG X F , ZHU F L, et al. Study on plasma cleaning and strength of wire bonding [C]//Proceedings of 2004 International Conference on the Business of Electronic Product Reliability and Liability (2004EPRL). Shanghai, China, 2004 : 65-71.
  • 7秦永和,李伟,程本同,刘光辉.汽车传感器的现状与发展趋势[J].传感器技术,2003,22(12):5-8. 被引量:28

引证文献1

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部