摘要
在求解高压功率(HV/P)器件的泊松方程与连续性方程中,将与注入和掺杂有关的因子引入物理参数模型。针对HV/P器件分析程序特有的收敛与溢出问题,采用从低电压到高电压的分段解法和归一化的模拟方法。利用此程序对HV/P器件具有场限环和场板结构的特性进行了模拟。
A factor related to the injection and the impurity concentration is introduced in the models of the physical parameters included in poisson's equation and continuity equations in the paper. The method of solution with different algorithms according to the step-by-step voltage from low to high and the method in which the potential adapts one of the three volues are proposed to overcome the tangles of convergence and overflow in the numerical analysis of the power and high-voltage devices. The simulation results of the field profile of the high-voltage devices with the field limiting ring and the field plate by means of the program for the optimum design of these devices are given.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
1989年第2期296-300,共5页
Journal of University of Electronic Science and Technology of China
基金
机电部基金
关键词
功率器件
数值分析
高压
电场
power devices
electric field distribution
field plate
field limiting ring
optimum design
numerical analysis
