摘要
AFM is used for forming silicon dioxide as a layer (mask) on the silicon wafer surface (100) during the cutting process in ambient atmosphere. The silicon dioxide is made through reaction of silicon and oxygen in the atmosphere. As a result of the anisotropic behavior of single crystalline silicon, the etching rates in alkaline solution depend greatly on the various crystal orientations. The anisotropic etching behaviors in KOH solution and reasons of crystalline silicon are described. Effect of etching conditions such as etching temperature and KOH concentration of the alkaline solution on height of the micro-protuberances has been described.
AFM is used for forming silicon dioxide as a layer （mask） on the silicon wafer surface （100） during the cutting process in ambient atmosphere. The silicon dioxide is made through reaction of silicon and oxygen in the atmosphere. As a result of the anisotropic behavior of single crystalline silicon, the etching rates in alkaline solution depend greatly on the various crystal orientations. The anisotropic etching behaviors in KOH solution and reasons of crystalline silicon are described. Effect of etching conditions such as etching temperature and KOH concentration of the alkaline solution on height of the micro-protuberances has been described.
基金
Sponsored by the Natural Science Foundation of China (Grant No.20271019), the Natural Science Foundation of Heilongjiang Province (Grant No.B200504) and the Education Department Foundation of Heilongjiang Province (Grant No.11511270).
