期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

AlGaN/GaN HEMT欧姆接触的研究进展 被引量：3

Investigation on the Ohmic Contacts in AlGaN/GaN HEMTs
下载PDF
导出
摘要 从欧姆接触形成的机理出发,介绍了在AlGaN/GaN HEMT中实现源和漏区欧姆接触的各种方法,如表面处理技术、金属化系统和重掺杂技术等。回顾了近年来这些方法的研究进展。 Based on the mechanism of ohmic contacts, various kinds of methods for realizing ohmic contacts in AlGaN/GaN HEMTs were introduced, such as surface treatment, metallization scheme, heavily doped technology and so on. The resent progress and development of these methods were reviewed.
作者 裴风丽 冯震 陈炳若
机构地区 武汉大学物理科学与技术学院 中国电子科技集团公司第十三研究所
出处 《半导体技术》 CAS CSCD 北大核心 2007年第1期6-11,共6页 Semiconductor Technology
基金 国家重点实验室基金项目(0502060C06) 国防基础科研项目(A1120060954) 国家重大基础研究项目(51327030201 51327030402)
关键词 欧姆接触 铝镓氮/氮化镓 高电子迁移率晶体管 ohmic contacts AlGaN/GaN HEMTs
分类号 TN325.3 [电子电信—物理电子学]
  • 相关文献

参考文献39

  • 1JOSHIN K,KIKKAWA T,HAYASHI H,et al.A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications[C]∥ IEEE International Electron Device Meeting.Washington,DC,2003:12.6.1-12.6.3.
  • 2WU Y F,SAXLER A,MOORE M,et al.30 W/mm GaN HEMTs by field plate optimization[J].IEEE Electron Device Lett,2004,25(3):117-119.
  • 3MOON J,WU S,WANG D,et al.Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications[J].IEEE Electron Device Lett,2005,26(6):348-350.
  • 4SELVANATHAN D,MOHAMMED F M,BAE J O,et al.Investigation of surface treatment schemes on n-type GaN and Al0.2Ga0.8N[J].JVST,2005,B23(6):2538-2544.
  • 5BUTTARI D,CHINI A,MENEGHESSO G,et al.Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs[J].IEEE Electron Device Lett,2002,23(2):76-78.
  • 6JEON C M,JANG H W,CHOI K J,et al.Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact[J].Solid-State Electronics,2002,46(5):695-698.
  • 7ZHANG A P,DANG G T,REN F,et al.Effect of N2 discharge treatent on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma[J].J Vac Sci Tech,2000,A18(4):1149-1152.
  • 8MOHAMMAD S N.Contact mechanisms and design principles for alloyed ohmic contacts to n-GaN[J].J Appl Phys,2004,95(12):7940-7953.
  • 9ZHOU L.Development and characterization of ohmic and Schottky contacts for GaN and AlGaN devices[D].German:University of Illinois at Urbana Champaign,2002.
  • 10QIAO D,GUAN Z F,CARLTON J,et al.Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the "advancing" Al/Ti metallization[J].Appl Phys Lett,1999,74(18):2652-2654.

同被引文献27

  • 1海潮和,韩郑生,周小茵,赵立新,李多力,毕津顺.提高SOI器件和电路性能的研究[J].Journal of Semiconductors,2006,27(z1):322-327. 被引量：5
  • 2张小玲,谢雪松,吕长治,李岩,李鹏,冯士维,李志国.AlGaN/GaN HEMT器件的高温特性[J].微电子学与计算机,2004,21(7):171-172. 被引量：4
  • 3李萍,陆胜天,张燕,龚海梅.Au／n-InP接触的热反应特性[J].半导体光电,2005,26(B03):103-105. 被引量：1
  • 4范隆,郝跃.辐射感生应力弛豫对Al_mGa_(1-m)N/GaN HEMT电学特性的影响[J].物理学报,2007,56(6):3393-3399. 被引量：3
  • 5SHINOHARA K, REGAN D C, TANG Y, et al.. Scaling of GaN HEMTs and schottky diodes for submillimeter-wave MMIC applications [J]. IEEE Trans. Electron. Dev., 2013, 60(10):2982-2996.
  • 6TANG Y, SHINOHARA K, REGAN D, et al.. Ultrahigh-speed GaN high-electron-mobility transistors with fT/fmathmax of 454/444 GHz [J]. IEEE Electron. Dev. Lett., 2015, 36(6):549-551.
  • 7BRIGHT A N, THOMAS P J, WEYLAND M, et al.. Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy [J]. J. Appl. Phys., 2001, 89(6):3143-3150.
  • 8BARDWELL J A, SPROULE G I, LIU Y, et al.. Comparison of two different Ti/Al/Ti/Au ohmic metallization schemes for AlGaN/GaN [J]. J. Vac. Sci. Technol. B, 2002, 20(4):1444-1447.
  • 9LEE C T, KAO H W. Long-term thermal stability of Ti/Al/Pt/Au Ohmic contacts to n-type GaN [J]. Appl. Phys. Lett., 2000, 76(17):2364-2366.
  • 10WONG Y Y, CHEN Y K, MAA J S, et al.. Low resistance copper-based Ohmic contact for AlGaN/GaN high electron mobility transistors [J]. Appl. Phys. Lett., 2013, 103(15):152104.

引证文献3

二级引证文献7

半导体技术
2007年 第1期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部