摘要
采用光学薄膜理论中干涉矩阵模型计算了峰值波长为630nm的AlGaInP红光LED的Al0·6Ga0·4As/AlAs材料的常规DBR和复合DBR的反射谱特性,用LP-MOCVD方法生长了模拟设计的DBR结构,测量了其白光反射谱,实验与模拟结果基本符合.制备了采用Al0·6Ga0·4As/AlAs复合DBR的LED器件,未封装输出光功率为2·3mW,外量子效率为5·6%,发光效率可达12lm/W,比常规DBR器件提高了35%.验证了复合DBR与常规DBR相比,可以大幅度提高AlGaInP红光LED的出光效率.
An Al0.6Ga0.4As/AIAs distributed Bragg reflector （DBR） for a 630nm peak wavelength high brightness AIGalnP LED is studied. The reflective characteristics of normal DBR and coupled DBR are simulated using the interference matrix model. The simulated DBR structures and corresponding LEDs are grown by LP-MOCVD. The simulated and experimental results both indicate that the coupled DBR can remarkably increase the light extraction efficiency of an A1GaInP LED. The non-encapsulated LED with the coupled DBR performs well,with 2. 3row output optical power, 12 lm/W luminous efficiency,and 5. 6% external quantum efficiency,with an improvement of 35% over that with a normal DBR.
基金
国家重点基础研究发展计划(批准号:2006CB604902)
北京市人才强教计划(批准号:05002015200504)
北京工业大学第四届研究生科技基金资助项目~~
