摘要
Current—voltage (I—V) and capacitance—voltage (C—V) characteristics of Au/p-CZT contacts with different surface treatments on cadmium zinc telluride (CZT) wafer’s surface were measured with Agilent 4339B high resistance meter and Agilent 4294A precision impedance analyzer, respectively. The Schottky barrier height was 0.85±0.05, 0.96±0.05 eV for non-passivated and passivated CZT crystals by I—V measurement. By C—V measurement, the Schottky barrier height was 1.39±0.05, 1.51±0.05 eV for non-passivated and passivated CZT crystals. The results show that the passivation treatment can increase the barrier height of the Au/p-CZT contact and decrease the leakage current. The main reason is that the higher barrier height of Au/p-CZT contacts can decrease the possibility for electrons to pass through the native TeO2 film. Most of the applied voltage appears on the depleted layer and there is only a negligible voltage drops across the nearly undepleted region. Furthermore, the electric field in the depleted layer is not uniform and can be calculated by the depletion approximation. The maximum electric field of CZT crystals is Em1=133 V/cm at x=0 for non-passivated CZT crystal and Em2=55 V/cm for passivated CZT crystal, respectively.
Current--voltage （I--V） and capacitance-voltage （C--V） characteristics of Au/p-CZT contacts with different surface treatments on cadmium zinc telluride （CZT） wafer＇s surface were measured with Agilent 4339B high resistance meter and Agilent 4294A precision impedance analyzer, respectively. The Schottky barrier height was 0.85 ＋0.05, 0.96＋ 0.05 eV for non-passivated and passivated CZT crystals by I-V measurement. By C-- V measurement, the Schottl~ barrier height was 1.39＋ 0.05, 1.51 ＋ 0.05 eV for non-passivated and passivated CZT crystals. The results show that the passivation treatment can increase the barrier height of the Au/p-CZT contact and decrease the leakage current. The main reason is that the higher barrier height of Au/p-CZT contacts can decrease the possibility for electrons to pass through the native TeO2 film. Most of the applied voltage appears on the depleted layer and there is only a negligible voltage drops across the nearly undepleted region. Furthermore, the electric field in the depleted layer is not uniform and can be calculated by the depletion approximation. The maximum electric field of CZT crystals is Eml= 133 V/cm at x=0 for non-passivated CZT crystal and Em2=55 V/cm for passivated CZT crystal, respectively.
出处
《中国有色金属学会会刊：英文版》
CSCD
2006年第B01期75-78,共4页
Transactions of Nonferrous Metals Society of China
基金
Project(50336040) supported by the National Natural Science Foundation of China
关键词
CZT晶体
耗尽层
电学性质
电子场
current-voltage characteristic
capacitance-voltage characteristic
depletion layer
electrical field
