期刊文献+

InN薄膜的氧化特性研究

The oxidation characteristics of InN films
原文传递
导出
摘要 研究了InN薄膜在不同氧气氛中的氧化特性.研究表明,在400℃以下,InN薄膜很难被氧化,而金属In很容易被氧化.因此富In的InN薄膜的氧化在400℃以下主要是金属In的氧化,在400℃以上为金属In和InN的同时被氧化.在400℃以上的氧化过程中,InN的表观氧化速率非常慢,这可能和InN的高温分解有关.InN的湿氧和干氧氧化结果说明湿氧氧化速率比干氧快. The characteristics of oxidation of InN film in different oxygen atmosphere have been investigated. At the temperature under 400 ℃, the oxidation of InN film is difficult, but the oxidation of metal In is very easy. Thus, the oxidation of In is the main process during oxidation of the In-rich InN film under the temperature less than 400 ℃. As the annealing temperature is higher than 400℃, metal In and InN are oxidated meanwhile. Although oxidation under the temperature high than 400℃, InN is apparently oxidated very slowly. This may be due to the decomposition of InN. The oxidation rate under the ambience of wet oxygen is larger than that under dry oxygen.
机构地区 南京大学物理系
出处 《物理学报》 SCIE EI CAS CSCD 北大核心 2007年第2期1032-1035,共4页 Acta Physica Sinica
基金 国家重点基础研究发展规划(973)(批准号:2006CB6049) 国家自然科学基金(批准号:60390072 60476030 60421003 60676057) 教育部重大项目(批准号:10416) 高等学校博士学科点专项科研基金(批准号:20050284004) 江苏省自然科学基金(批准号:BK2005210 BK2006126)资助的课题~~
关键词 INN 氧化铟 氧化 X射线衍射 InN, In203, oxidation, XRD
  • 相关文献

参考文献19

  • 1Blant A V, Cheng T S, Jeffs N J 1999 Materials Science and Engineering B 59 218
  • 2谢自力,张荣,毕朝霞,刘斌,修向前,顾书林,江若琏,韩平,朱顺明,沈波,施毅,郑有炓.InN材料及其应用[J].微纳电子技术,2004,41(12):26-32. 被引量:7
  • 3梁春广,张冀.GaN——第三代半导体的曙光[J].Journal of Semiconductors,1999,20(2):89-99. 被引量:88
  • 4袁明文.氮化镓在光电子和微电子器件中的应用[J].半导体技术,2001,26(6):16-19. 被引量:6
  • 5Nanishi Y, Staito Y, Yamaguchi T 2003 Jpn.J. Appl. Phys.42 2549
  • 6Bechstedt F,Furthmuller J 2002 J. Crystal Growth 246 315
  • 7Foutz B E, Oleary S K, Shur M S 1999 J. Appl. Phys. 85 7727
  • 8Bockowski M 1999 Physica B 265 1
  • 9Igashiwaki M, Matsui T 2002 Jpn. J. Appl. Phys. 41 1540
  • 10Higashiwaki M, Matsui T 2002 J. Crystal Growth 251 494

二级参考文献35

  • 1[1]BLANT A V, CHENG T S, JEFFS N J. EXAFS studies of Mg doped InN grown on Al2O3 [J] . Materials Science and Engineering, 1999, B59 (1~3): 218-221.
  • 2[5]NANISHI Y, STAITO Y, YAMAGUCHI T. RF-molecular beam epitaxy growth and properties of InN related alloys, Jpn J Appl Phys, 2003, 42: 2549-2599.
  • 3[6]BECHSTEDT F, FURTHMULLER J. Do we know the fundamental energy gap of InN? [J] . Journal of Crystal Growth,2002, 246: 315-319.
  • 4[7]WU J, WICZ W W, YU K M, et al. Unusual properties of the fundamental band gap of InN [J] . Applied Physics Letters, 2002, 80: 3967-3969.
  • 5[8]FOUTZ B E, OLEARY S K, SHUR M S, et al. Transient electron transport in wurtzite GaN, InN and AlN [J] . Journal of Applied Physics, 1999, 85 (11): 7727-7734.
  • 6[9]BOCKOWSKI M. High pressure direct synthesis of Ⅲ-Ⅴ nitrides [J] . Physica B, 1999, 265: 1-5.
  • 7[10]HIGASHIWAKI M, MATSUI T. Plasma assisted MBE growth of InN films and InAlN/InN heterostructures [ J] . Journal of Crystal Growth, 2003, 251: 494-498.
  • 8[11]GUO O, OKADA A, KIDERA H, et al. Effect of GaN buffer layer on crystallinity of InN grown on (111) GaAs[J]. Journal of Crystal Growth, 2002, (237-239): 1032-1036.
  • 9[12]ALVES H W L, ALVES J L A, SCOLFARO L M R, et al.Planar force constant method for lattice dynamics of cubic InN [ J] . Materials Science and Engineering, 2002, B93:90-93.
  • 10[13]YANG F H, HWANG J S, YANG Y J, et al. Growth of high quality epitaxial InN film with high speed reactant gas by organomet allic vapor phase epitaxy [J] . Jpn J Appl Phys,2002, 41: 11321-1324.

共引文献96

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部