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基于铱配合物材料的高效高稳定性有机发光二极管 被引量:10

High-efficiency and high-stability phosphorescent OLED based on new Ir complex
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摘要 使用基于重金属Ir的新磷光材料(tpbi)2Ir(acac),制备了多层结构有机发光二极管器件:ITO/CuPc(40nm)/α-NPD(45nm)/CBP:(tpbi)2Ir(acac)(3%,30nm)/BCP(20nm)/Alq3(20nm)/LiF(1nm)/Al(100nm).测试了材料的寿命、光谱吸收性质和器件的I-V-L特性.器件在低电压下电流符合热发射注入模型,高电压下I-V呈线形关系.不同偏压下器件发光光谱稳定,多峰拟合结果表明器件光谱由α-NPD发光峰(450nm),(tpbi)2Ir(acac)主发光峰(518nm)和肩峰(543nm)构成.驱动电压为6V时,器件效率达到最大12.1lm/W,此时亮度为136cd/m2,器件亮度最大为13500cd/m2,此时效率为0.584lm/W. Multi-layer phosphorescent OLED with (tpbi)2 Ir(acac) was fabricated which has the structure: ITO/CuPc (40 nm)/α-NPD (45 nm)/CBP: (tpbi)2Ir(acac) (3%, 30 nm)/BCP (20 nm)/Akb (20 nm)/LiF (1 nm)/Al (100 nm). Absorption spectra, phosphorescence lifetime of Ir complex, and I-V-L characteristic of the device was tested. The current of the device under low applied voltage conforms to the Richaardon-Scbetty emission, and shows linear relationship under high voltage. Gauss peak fit shows the OLED spectra to be composed of α-NPD peak(450 nm), (tpbi)2Ir(acac) main peak(518 nm) and shoulder peak (543 nm). Maximum power efficiency of PHOLED is 12.1 ]m/W (at 6V) with luminance 136 cd/m^2, and the maximum luminance is 13500 cd/m^2 with power efficiency 0.584 lm/W.
出处 《物理学报》 SCIE EI CAS CSCD 北大核心 2007年第2期1156-1161,共6页 Acta Physica Sinica
基金 电子科技大学-浙江阳光集团联合OLED器件研发项目(批准号:W050317)资助的课题~~
关键词 有机发光二极管 磷光 效率 OLED, phosphorescence, power efficiency
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参考文献26

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