摘要
Katsuki采用原子力显微镜(AFM)模拟单个磨粒与芯片的划痕作用,文中以此为基础使用线性回归的方法计算了化学机械抛光(CMP)中实际载荷情况下的划痕深度数量级为10-11m;Nishizawa应用椭圆偏振光谱仪(SE)测试了氧化薄膜厚度和反应时间的关系,并结合理论计算得到1.0×10-8s内氧化薄膜厚度的量级为10-13m.实验结果为单分子层材料去除机理提供了依据.最后,以此机理为基础,建立了单分子层材料去除模型,结果与他人实验相吻合,为进一步研究CMP中单分子层材料去除机理提供了理论依据.
The mechanism of CMP material removal is investigated. Katsuki has proposed wear behavior between a single slurry particle and the wafer surface based on atomic force microscopy （AFM） measurements. The scratch depth under real CMP conduction is on the order of 10^-11m, as determined from the linear regression mechanism. A spectroscopic ellipsometry （SE） tool was used to study the relationship between the thickness of the oxidized layer and the chemical action time, which was presented by Nishizawa. Since the real CMP chemical action time is on the order of 1.0×10^-8s, the thickness of the oxidized layer is on the order of 10^-13m, as evaluated by the theoretical model based on the experiment. A closed-form equation supported by previously published experimental data is also derived from the material removal rate in terms of the molecular mechanism. The experimental results,in combination with the calculations,indicate that the CMP material is removed at the molecular scale. These analyses are useful to substantiate the molecular-scale mechanism of CMP material removal in addition to its underlying theoretical foundation.
基金
江苏省自然科学基金(批准号:BK2004020)
教育部回国人员启动基金(批准号:[2004]527)
清华大学摩擦学国家重点实验室开放基金(批准号:SKLT04-06)资助项目~~
关键词
化学机械抛光
单分子层机理试验
理论模型
分子量级
chemical mechanical polishing
molecular-scale mechanism experiment
theoretical model
