摘要
通过疏水键合方法实现了InGaAsP/InP有源区与GaAs/AlAs DBR的单面和双面键合,并通过SEM,I-V曲线和反射谱、光致发光谱等手段研究了GaAs/InP键合界面的机械、光学和电学性质,良好的界面性质为使用键合技术制备长波长面发射激光器提供了可能性.
InGaAsP/InP active regions were single-fused or double-fused to GaAs/AIAs DBRs by hydrophobic bonding. The mechanical,optical,and electrical characteristics of the bonded interfaces were investigated through SEM, reflection spectrum, PL spectrum,and I-V curves. Good performance indicates an excellent interface. This makes it possible for the fabrication of long-wavelength surface emitting lasers by the bonding technique.
基金
国家重点基础研究发展计划资助项目(批准号:2003CB314902)
关键词
键合
面发射激光器
光致发光谱
bonding
surface emitting laser
photoluminescence spectrum
