摘要
本文采用正交试验设计法优化硅片化学清洗工艺，由Ｘ光电子能谱（ＸＰＳ）检测清洗后的硅表面沾污杂质．结果表明，硅表面主要沾污杂质氧和碳的最低含量分别为１．６×１０１３／ｃｍ２和３．１×１０１３／ｃｍ２，均达到超净的水平（～３×１０１３／ｃｍ２）．本文还研究了Ⅰ号液和Ⅱ号液对硅片表面沾污的影响．
Abstract An experimental design mothed is used to optimize a chemical cleaning process of silicon wafers, and X-ray photoelectron spectroscopy (XPS) is used to measure the dearied silicon surfaces. XPS survey spectra demonstrate that main impurities such as oxygen and carbon on the cleaned silicon surface reach an atomic cleanness level (￣ 3 × 1013/cm2), oxygen atom content is 1. 6 × 1013/cm2, carbon content is 3. 1× 1013/cm2 respectively. The influence of Ⅰ、 # Ⅱ # chemical solution on impurities at the cleaned silicon surfaces is investigated.
关键词
硅片
化学清洗
优化
半导体薄膜
Chemical cleaning
Optimization
Semiconductor devices
Surfaces
