摘要
对不同组分、阱宽和垒宽的锗硅单量子阱和多量子阶样品的Ｃ－Ｖ特性及其与温度的关系进行了测量，并用数值方法解油松方程模拟计算了单量子阱样品的Ｃ－Ｖ特性及其Ｃ－Ｖ载流于浓度分布．实验和模拟计算的结果均表明，Ｃ－Ｖ载流子浓度分布在量子阱位置有一个浓度较高的峰值，它反映了被限制在阱中的载流子的积累，峰高随着量子阶异质界面的能带偏移的增加而增加．低温时由于阱中载流子的热发射几率变小，阱中载流于浓度的变化跟不上测试电压的频率，造成电容值显著变小．
Abstract The capacitance-voltage(C-V)characteristics of single quantum wells and multiple quantum wells with various Ge components, well widths and barrier widths at different temperatures have been measured. They are also simulated by mumerically solving the Poisson equation. By comparing the results of experiment and simulation, it can be seen that the C-V profile exhibits a peak corresponding to a location of quantum well in its distribution. The height of peak varies with the valence band offset at the heterointerface. At liquid nitrogen temperature, the capacitance becomes much smaller than that at room temperature. It can be explained by that the emission rate of the holes in the well at low temperature becomes so small that it can't match the alternative detective signal in the capacitance measurement.
基金
国家自然科学基金
上海市科技启明星计划资助
