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退火处理对溶胶-凝胶法制备AZO薄膜性能的影响 被引量:2

INFLUENCE OF ANNEALING ON PROPERTIES OF AZO THIN FILMS PREPARED BY SOL-GEL METHOD
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摘要 采用溶胶-凝胶旋涂法在普通载玻片衬底上制备出Al^3+掺杂ZnO(AZO)薄膜。对所制备的薄膜在空气气氛中进行了不同温度(400-600℃)的退火处理,并在500℃下的不同气氛(氢气和氩气)中进行退火处理。利用XRD和SEM等分析手段对薄膜进行了表征,测定了薄膜的透光性。研究表明,随空气中退火温度的提高,ZnO薄膜(002)衍射峰强度得到增强,半高宽逐渐减小,透射率从85%提高到95%。薄膜晶粒尺寸范围为23.50-29.80nm;在氢气和氩气气氛下退火得到的薄膜性能均优于在空气中退火得到的薄膜性能。 The Al^3+ doped ZnO thin films were prepared on glass substrates by Sol-Gel Spinning method. The as-grown films were annealed at various temperatures (400℃-600℃) in air and different atmospheres (Air, H2 and Ar ) at 500℃. Thin films were characterized using scanning electron microscopy and X-ray diffraction. Their transmittances were measured. The results show that with increasing annealing temperature in air, the intensity of (002) diffraction peak becomes stronger and the full width at half the maximum (FWHM) of the (002) diffraction peak decreases gradually. The transmittance is improved. The range of grain size is from 23.50nm to 34. 55nm. The property of films prepared in Hz or Ar is better than that in air.
出处 《理化检验(物理分册)》 CAS 2007年第2期55-58,77,共5页 Physical Testing and Chemical Analysis(Part A:Physical Testing)
基金 合肥工业大学中青年科技创新群体专项资助(103037016)
关键词 溶胶-凝胶 AZO薄膜 退火处理 Sol-Gel AZO film Annealing
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  • 1Jiang X, Wong F L, Fung M K, et al. Aluminumdoped zinc oxide films as transparent conductive electrode for organic light-emiting device[J]. Appl Phys Lett, 2003,83(9) :1875-1877.
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