摘要
在对单电子晶体管主方程模型及主方程的解法详细的分析的基础上,把单电子晶体管主方程模型和SP ICE的ABM功能结合,提出了基于主方程的单电子晶体管SP ICE模型。该模型由一个非线性电压控制电流源、非线性电压控制电压源、电容构成。并利用该模型对单电子晶体管V-I特性进行SP ICE模拟,同直接解主方程解法相比,仿真结果表明该模型具有合理的精确度。
Basing on the analysis of master equation model of single electron transistors, we combine master equation model of single electron transistors with SPICE＇ ABM function. A SPICE model of single electron transistors based on the master equation is proposed. It consists of a nonlinear voltage-controlled current source, a nonlinear voltage-controlled voltage source, and capacitance. With the model, the V-I characteristics of single electron transistors are simulated with SPICE. The simulation results show that the model is reasonably precise comparing with the traditional methods.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2007年第1期18-23,共6页
Research & Progress of SSE
基金
教育部新世纪优秀人才支持计划(NCET-04-0767)
高校博士点基金(20060532002)
湖南省科技计划项目(03GKY3115
04FJ2003
05GK2005
06JJ2024)
国家自然科学基金(50677014)
