摘要
利用脉冲激光沉积技术，在光学玻璃基片上制备了性能良好的ＺｎＯ压敏多晶薄膜，其非线性系数α≥６，压敏转折电压约为３．５Ｖ。对不同制备条件下沉积样品的ＸＲＤ分析表明，形成非线性的决定因素是其中存在ＺｎＯ相，Ｚｎ７Ｓｂ２Ｏ１２尖晶石相及富Ｂｉ相，这与体材料的结论一致。我们发现。
Polycrystalline ZnO piezoresistive thin films with good characteristics have been prepared on optical glass substrates by using pulsed laser deposition(PLD) technique. The nonlinear coefficient is above 6, and the threshold voltage is about 3.5 V. The XRD spectrum of the samples with different deposition conditions show that, for forming nonlinear characteristics there must be ZnO phase, Zn 7Sb 2O 12 spinel phase and rich Bi phase in the films. This is consistent with the conclusions of bulk varistor materials. Only when the temperature and the kinds of substrates are suitable, it is possible to deposit the excellent ZnO polycrystalline thin films without heat treatment.
出处
《压电与声光》
CSCD
北大核心
1996年第5期358-360,F004,共4页
Piezoelectrics & Acoustooptics
基金
激光技术国家重点实验室资助
关键词
压敏电阻
薄膜
脉冲激光沉积
氧化锌
ZnO varistor, thin film, pulsed laser deposition(PLD)
